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this is information on a product in full production. october 2012 doc id 023468 rev 2 1/22 22 STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 n-channel 800 v, 0.3 typ., 14 a supermesh? 5 power mosfet in d 2 pak, to-220fp, to-220 and to-247 packages datasheet ? production data features worldwide best fom (figure of merit) ultra low gate charge 100% avalanche tested zener-protected applications switching applications description these devices are n-channel zener-protected power mosfets realized in supermesh ? 5, a revolutionary avalanche-rugged very high voltage power mosfet technology based on an innovative proprietary vertical structure. the result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. figure 1. internal schematic diagram type v ds r ds(on) max i d p tot STB15N80K5 800 v < 0.375 14 a 190 w stf15n80k5 35 w stp15n80k5 190 w stw15n80k5 to-220 1 2 3 tab 1 2 3 1 2 3 to-220fp to-247 1 3 tab d 2 pak d(2, tab) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging STB15N80K5 15n80k5 d 2 pak tape and reel stf15n80k5 to-220fp tube stp15n80k5 to-220 stw15n80k5 to-247 www.st.com
contents STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 2/22 doc id 023468 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 electrical ratings doc id 023468 rev 2 3/22 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pak, to-220, to-247 to-220fp v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 14 14 (1) 1. limited by package. a i d drain current (continuous) at t c = 100 c 8.8 8.8 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 56 56 (1) a p tot total dissipation at t c = 25 c 190 35 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 4a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 150 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (3) 3. i sd 14 a, di/dt 100 a/s, v peak v (br)dss peak diode recovery voltage slope 4.5 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit to-220 to-247 d 2 pak to-220fp rthj-case thermal resistance junction-case max 0.66 3.6 c/w rthj-amb thermal resistance junction-amb max 62.5 50 62.5 rthj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu. thermal resistance junction-pcb max 30
electrical characteristics STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 4/22 doc id 023468 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 800 v i dss zero gate voltage drain current (v gs = 0) v ds = 800 v v ds = 800 v, tc=125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 7 a 0.3 0.375 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 - 1100 - pf c oss output capacitance 85 pf c rss reverse transfer capacitance 1.5 pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 640 v -113- pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -49-pf r g intrinsic gate resistance f = 1mhz, i d =0 - 4.5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 640 v, i d = 14 a v gs =10 v (see figure 20 ) - 32 6 22 - nc nc nc
STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 electrical characteristics doc id 023468 rev 2 5/22 the built-in back-to-back zener diodes have been specifically designed to enhance not only the device?s esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 400 v, i d = 7 a, r g =4.7 , v gs =10 v (see figure 22 ) - 19 17.6 44 10 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) - 14 56 a a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 14 a, v gs =0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 14 a, v dd = 60 v di/dt = 100 a/s, (see figure 21 ) - 445 8.2 37 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 14 a,v dd = 60 v di/dt=100 a/s, tj=150 c (see figure 21 ) - 580 10 35 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d = 0 30 - - v
electrical characteristics STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 6/22 doc id 023468 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak and to-220 figure 3. thermal impedance for d 2 pak and to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp i d 10 1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 1 s 10 s 100 s 10m s tj=150c tc=25c s ingle p u l s e 1m s 0.1 0.1 am154 3 2v1 i d 10 1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 1 s 10 s 100 s 10m s tj=150c tc=25c s ingle p u l s e 1m s 0.1 0.01 am154 33 v1 figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 1 s 10 s 100 s 10m s tj=150c tc=25c s ingle p u l s e 1m s 0.1 0.1 am154 3 4v1
STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 electrical characteristics doc id 023468 rev 2 7/22 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. source-drain diode forward characteristics i d 24 12 0 0 8 v d s (v) 16 (a) 4 12 v g s = 6 v v g s = 7 v v g s = 8 v v g s = 9 v 6 1 8 3 0 v g s = 10 v am154 3 5v1 i d 1 8 12 6 0 v g s (v) (a) 4 6 8 24 10 v d s = 20 v 3 0 am154 3 6v1 v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =640 v i d =14 a 25 3 00 200 100 0 400 500 v d s (v) v d s 12 3 0 600 am1544 3 v1 r d s (on) 0. 3 0.2 0.1 0 0 4 i d (a) ( ) 2 6 v g s =10v am15441v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am15442v1 v s d 4 i s d (a) (v) 10 6 8 0.6 0.7 0. 8 0.9 t j =-50c t j =150c t j =25c 12 am154 3 9v1
electrical characteristics STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 8/22 doc id 023468 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. output capacitance stored energy figure 17. normalized v ds vs temperature v g s (th) 0. 8 0.7 0.6 0.5 -75 t j (c) (norm) -25 0.9 75 25 125 i d = 100 a v d s = v g s 1 1.1 am15440v1 r d s (on) 2 1.2 0.4 -75 t j (c) (norm) -25 75 25 125 0. 8 1.6 2.4 i d = 7 a v g s = 10 v am154 3 7v1 e o ss 4 0 0 v d s (v) ( j) 400 200 8 600 12 am15444v1 v d s t j (c) i d = 1ma 0.9 8 0.9 -75 -25 75 25 125 0.94 1.02 1.06 1.1 (norm) am154 38 v1 figure 18. maximum avalanche energy vs temperature % !3 4 * ?# m* ) $ ! 6 $$ 6 !-v
STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 test circuits doc id 023468 rev 2 9/22 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 10/22 doc id 023468 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 package mechanical data doc id 023468 rev 2 11/22 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 12/22 doc id 023468 rev 2 figure 25. d2pak (to-263) drawing figure 26. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 package mechanical data doc id 023468 rev 2 13/22 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 14/22 doc id 023468 rev 2 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 package mechanical data doc id 023468 rev 2 15/22 table 11. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 16/22 doc id 023468 rev 2 figure 28. to-220fp drawing 7012510_rev_k_b
STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 package mechanical data doc id 023468 rev 2 17/22 table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 18/22 doc id 023468 rev 2 figure 29. to-247 drawing 0075 3 25_g
STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 packaging information doc id 023468 rev 2 19/22 5 packaging information table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging information STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 20/22 doc id 023468 rev 2 figure 30. tape figure 31. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
STB15N80K5, stf15n80k5, stp15n80k5, stw15n80k5 revision history doc id 023468 rev 2 21/22 6 revision history table 14. document revision history date revision changes 18-jul-2012 1 first release. 31-oct-2012 2 ? inserted: i ar , e as and dv/dt values in ta b l e 2 ? inserted: ta bl e 5 , 6 and 7 typical values ? inserted: section 2.1: electrical characteristics (curves) ? minor text changes
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